Invention Grant
- Patent Title: High performance system-on-chip discrete components using post passivation process
- Patent Title (中): 高性能片上分立器件采用后钝化工艺
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Application No.: US11062276Application Date: 2005-02-18
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Publication No.: US08089155B2Publication Date: 2012-01-03
- Inventor: Mou-Shiung Lin
- Applicant: Mou-Shiung Lin
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A system and method for forming post passivation discrete components, is described. High quality discrete components are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
Public/Granted literature
- US20050230783A1 High performance system-on-chip discrete components using post passivation process Public/Granted day:2005-10-20
Information query
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