Invention Grant
US08089152B2 Continuously variable graded artificial dielectrics using nanostructures
失效
使用纳米结构的连续可变分级人造电介质
- Patent Title: Continuously variable graded artificial dielectrics using nanostructures
- Patent Title (中): 使用纳米结构的连续可变分级人造电介质
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Application No.: US11589988Application Date: 2006-10-31
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Publication No.: US08089152B2Publication Date: 2012-01-03
- Inventor: Jeffrey Miller
- Applicant: Jeffrey Miller
- Applicant Address: US CA Palo Alto
- Assignee: Nanosys, Inc.
- Current Assignee: Nanosys, Inc.
- Current Assignee Address: US CA Palo Alto
- Agent Donna M. Fabian
- Main IPC: H01L23/46
- IPC: H01L23/46

Abstract:
Graded artificial dielectrics using nanostructures, such as nanowires, are disclosed. The graded artificial dielectric includes a material (typically a dielectric) with a plurality of nanostructures, such as nanowires, embedded within the dielectric material. One or more characteristics of the nanostructures are spatially varied from a first region within the dielectric to a second region within the dielectric to produce permittivity of the graded artificial dielectric that is spatially varied. The characteristics that can be varied include, but are not limited to, nanostructure density, nanostructure length, nanostructure aspect ratio, nanostructure oxide ratio, and nanostructure alignment. Methods of producing graded artificial dielectrics are also provided. A wide range of electronic devices such as antennas can use graded artificial dielectrics with nanostructures to improve performance.
Public/Granted literature
- US20110165405A1 CONTINUOUSLY VARIABLE GRADED ARTIFICIAL DIELECTRICS USING NANOSTRUCTURES Public/Granted day:2011-07-07
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