Invention Grant
- Patent Title: Homoepitaxial gallium-nitride-based electronic devices and method for producing same
- Patent Title (中): 同质外延氮化镓基电子器件及其制造方法
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Application No.: US10329982Application Date: 2002-12-27
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Publication No.: US08089097B2Publication Date: 2012-01-03
- Inventor: Mark Phillip D'Evelyn , Nicole Andrea Evers , An-Ping Zhang , Jesse Berkley Tucker , Jeffrey Bernard Fedison
- Applicant: Mark Phillip D'Evelyn , Nicole Andrea Evers , An-Ping Zhang , Jesse Berkley Tucker , Jeffrey Bernard Fedison
- Applicant Address: US NY Albany
- Assignee: Momentive Performance Materials Inc.
- Current Assignee: Momentive Performance Materials Inc.
- Current Assignee Address: US NY Albany
- Agent Joseph E. Waters
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2, and homoepitaxially forming at least one semiconductor layer on the substrate.
Public/Granted literature
- US20040124435A1 Homoepitaxial gallium-nitride-based electronic devices and method for producing same Public/Granted day:2004-07-01
Information query
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