Invention Grant
US08089036B2 Image sensor with global shutter and in pixel storage transistor
有权
具有全局快门和像素存储晶体管的图像传感器
- Patent Title: Image sensor with global shutter and in pixel storage transistor
- Patent Title (中): 具有全局快门和像素存储晶体管的图像传感器
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Application No.: US12433598Application Date: 2009-04-30
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Publication No.: US08089036B2Publication Date: 2012-01-03
- Inventor: Sohei Manabe
- Applicant: Sohei Manabe
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01J40/14

Abstract:
An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.
Public/Granted literature
- US20100276574A1 IMAGE SENSOR WITH GLOBAL SHUTTER Public/Granted day:2010-11-04
Information query
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