Invention Grant
- Patent Title: CMP method
- Patent Title (中): CMP方法
-
Application No.: US12415406Application Date: 2009-03-31
-
Publication No.: US08088690B2Publication Date: 2012-01-03
- Inventor: Thomas L. McDevitt , Graham M. Bates , Eva A. Shah , Matthew T. Tiersch , Eric J. White
- Applicant: Thomas L. McDevitt , Graham M. Bates , Eva A. Shah , Matthew T. Tiersch , Eric J. White
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Richard M. Kotulak
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.
Public/Granted literature
- US20100248479A1 CMP METHOD Public/Granted day:2010-09-30
Information query
IPC分类: