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US08088686B2 Method of remedying deterioration of insulating film 有权
补救绝缘膜劣化的方法

Method of remedying deterioration of insulating film
Abstract:
The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wiring layer, can be conducted using a dry process, and exhibits excellent applicability to mass production. The insulating film that has been deteriorated by plasma treatment is brought into contact with a remedial agent composed of a compound with a molecular structure having at least one of a nitro group and a carbonyl group, and at least one of a hydrocarbon group and a hydrogen group.
Abstract(Chinese):

本发明提供一种补偿绝缘膜的劣化的方法，其在通过等离子体处理劣化的绝缘膜的补救处理中，不会在诸如铜布线层的布线材料上留下残留的补救剂，可以使用 干法，对大批量生产具有优异的适用性。 通过等离子体处理劣化的绝缘膜与由具有至少一个硝基和羰基的分子结构的化合物组成的补救剂与烃基和氢中的至少一种接触 组。

Public/Granted literature
Information query
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）
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