Invention Grant
- Patent Title: Method for manufacturing bonded substrate with sandblast treatment
- Patent Title (中): 喷砂处理方法
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Application No.: US12081297Application Date: 2008-04-14
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Publication No.: US08088670B2Publication Date: 2012-01-03
- Inventor: Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
- Applicant: Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2007-109321 20070418; JP2008-050880 20080229
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L21/30 ; H01L27/12 ; H01L21/18

Abstract:
When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
Public/Granted literature
- US20080261381A1 Method for manufacturing bonded substrate Public/Granted day:2008-10-23
Information query
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