Invention Grant
US08088663B2 SRAM cell having a rectangular combined active area planar pass gate and planar pull-down NFETS
有权
具有矩形组合有源面平面通过栅极和平面下拉NFETS的SRAM单元
- Patent Title: SRAM cell having a rectangular combined active area planar pass gate and planar pull-down NFETS
- Patent Title (中): 具有矩形组合有源面平面通过栅极和平面下拉NFETS的SRAM单元
-
Application No.: US13005894Application Date: 2011-01-13
-
Publication No.: US08088663B2Publication Date: 2012-01-03
- Inventor: Xiangdong Chen , Shang-Bin Ko , Dae-Gyu Park
- Applicant: Xiangdong Chen , Shang-Bin Ko , Dae-Gyu Park
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: H01L21/8234
- IPC: H01L21/8234
Abstract:
A planar pass gate NFET is designed with the same width as a planar pull-down NFET. To optimize a beta ratio between the planar pull-down NFET and an adjoined planar pass gate NFET, the threshold voltage of the planar pass gate NFET is increased by providing a different high-k metal gate stack to the planar pass gate NFET than to the planar pull-down NFET. Particularly, a threshold voltage adjustment dielectric layer, which is formed over a high-k dielectric layer, is preserved in the planar pass gate NFET and removed in the planar pull-down NFET. The combined NFET active area for the planar pass gate NFET and the planar pull-down NFET is substantially rectangular, which enables a high fidelity printing of the image of the combined NFET active area by lithographic means.
Public/Granted literature
- US20110111584A1 SRAM CELL HAVING A RECTANGULAR COMBINED ACTIVE AREA FOR PLANAR PASS GATE AND PLANAR PULL-DOWN NFETS Public/Granted day:2011-05-12
Information query
IPC分类:
