Invention Grant
US08088643B2 Resistance variable memory device with nanoparticle electrode and method of fabrication
有权
具有纳米颗粒电极的电阻可变存储器件及其制造方法
- Patent Title: Resistance variable memory device with nanoparticle electrode and method of fabrication
- Patent Title (中): 具有纳米颗粒电极的电阻可变存储器件及其制造方法
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Application No.: US12355541Application Date: 2009-01-16
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Publication No.: US08088643B2Publication Date: 2012-01-03
- Inventor: Jun Liu , Kristy A. Campbell
- Applicant: Jun Liu , Kristy A. Campbell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
Public/Granted literature
- US20090124041A1 RESISTANCE VARIABLE MEMORY DEVICE WITH NANOPARTICLE ELECTRODE AND METHOD OF FABRICATION Public/Granted day:2009-05-14
Information query
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