Invention Grant
US08088556B2 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
有权
硫代吡喃衍生物，聚合物，抗蚀剂组合物和使用这种抗蚀剂组合物的半导体器件的制造方法
- Patent Title: Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
- Patent Title (中): 硫代吡喃衍生物，聚合物，抗蚀剂组合物和使用这种抗蚀剂组合物的半导体器件的制造方法
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Application No.: US12783212Application Date: 2010-05-19
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Publication No.: US08088556B2Publication Date: 2012-01-03
- Inventor: Koji Nozaki
- Applicant: Koji Nozaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; C07D335/02 ; C08F228/06
Abstract:
To provide a thiopyran derivative, having a structure expressed by the following general formula 1: where X is O or S; R1 is —H, —CH3, C2-4 alkyl group, thioether group, or ketone group; R2 is —H, —CH3, or trifluoromethyl group; and R1 and R2 may be identical to or different from each other.
Public/Granted literature
Information query
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