Invention Grant
US08088499B1 Optoelectronic device with nanoparticle embedded hole injection/transport layer 失效
具有纳米颗粒的光电器件嵌入式空穴注入/传输层

  • Patent Title: Optoelectronic device with nanoparticle embedded hole injection/transport layer
  • Patent Title (中): 具有纳米颗粒的光电器件嵌入式空穴注入/传输层
  • Application No.: US11589338
    Application Date: 2006-10-30
  • Publication No.: US08088499B1
    Publication Date: 2012-01-03
  • Inventor: Qingwu WangWenguang LiHua Jiang
  • Applicant: Qingwu WangWenguang LiHua Jiang
  • Applicant Address: US MA Woburn
  • Assignee: Agiltron, Inc.
  • Current Assignee: Agiltron, Inc.
  • Current Assignee Address: US MA Woburn
  • Agent Joseph Stecewycz
  • Main IPC: H01L51/50
  • IPC: H01L51/50
Optoelectronic device with nanoparticle embedded hole injection/transport layer
Abstract:
An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.
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