Invention Grant
US08088499B1 Optoelectronic device with nanoparticle embedded hole injection/transport layer
失效
具有纳米颗粒的光电器件嵌入式空穴注入/传输层
- Patent Title: Optoelectronic device with nanoparticle embedded hole injection/transport layer
- Patent Title (中): 具有纳米颗粒的光电器件嵌入式空穴注入/传输层
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Application No.: US11589338Application Date: 2006-10-30
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Publication No.: US08088499B1Publication Date: 2012-01-03
- Inventor: Qingwu Wang , Wenguang Li , Hua Jiang
- Applicant: Qingwu Wang , Wenguang Li , Hua Jiang
- Applicant Address: US MA Woburn
- Assignee: Agiltron, Inc.
- Current Assignee: Agiltron, Inc.
- Current Assignee Address: US MA Woburn
- Agent Joseph Stecewycz
- Main IPC: H01L51/50
- IPC: H01L51/50

Abstract:
An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.
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