Invention Grant
- Patent Title: Overlay measurement on double patterning substrate
- Patent Title (中): 双重图案化衬底上的覆盖测量
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Application No.: US12248777Application Date: 2008-10-09
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Publication No.: US07992115B2Publication Date: 2011-08-02
- Inventor: Eddy Cornelis Antonius Van Der Heijden , Johannes Anna Quaedackers , Dorothea Maria Christina Oorschot , Hieronymus Johannus Christiaan Meessen , Yin Fong Choi
- Applicant: Eddy Cornelis Antonius Van Der Heijden , Johannes Anna Quaedackers , Dorothea Maria Christina Oorschot , Hieronymus Johannus Christiaan Meessen , Yin Fong Choi
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CD1 of the elements of the first structure is different from a design width CD2 of the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.
Public/Granted literature
- US20090100391A1 Overlay Measurement on Double Patterning Substrate Public/Granted day:2009-04-16
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