Invention Grant
US07992071B2 Method for implementing error-correction codes in non-volatile memory 有权
在非易失性存储器中实现纠错码的方法

  • Patent Title: Method for implementing error-correction codes in non-volatile memory
  • Patent Title (中): 在非易失性存储器中实现纠错码的方法
  • Application No.: US12814917
    Application Date: 2010-06-14
  • Publication No.: US07992071B2
    Publication Date: 2011-08-02
  • Inventor: Mark Murin
  • Applicant: Mark Murin
  • Applicant Address: IL Kfar Saba
  • Assignee: Sandisk IL Ltd.
  • Current Assignee: Sandisk IL Ltd.
  • Current Assignee Address: IL Kfar Saba
  • Agency: Toler Law Group
  • Main IPC: G11C29/00
  • IPC: G11C29/00
Method for implementing error-correction codes in non-volatile memory
Abstract:
A method in a data storage device for storing a plurality of data bits into a non-volatile memory includes transforming a plurality of data bits to be stored in a non-volatile memory device to generate a plurality of transformed data bits. The method further includes generating a parity bit corresponding to the plurality of transformed data bits, transforming the parity bit, and storing the plurality of data bits and the transformed parity bit in the non-volatile memory device. Each of the plurality of data bits and the parity bit form an all-one codeword.
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