Invention Grant
US07992071B2 Method for implementing error-correction codes in non-volatile memory
有权
在非易失性存储器中实现纠错码的方法
- Patent Title: Method for implementing error-correction codes in non-volatile memory
- Patent Title (中): 在非易失性存储器中实现纠错码的方法
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Application No.: US12814917Application Date: 2010-06-14
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Publication No.: US07992071B2Publication Date: 2011-08-02
- Inventor: Mark Murin
- Applicant: Mark Murin
- Applicant Address: IL Kfar Saba
- Assignee: Sandisk IL Ltd.
- Current Assignee: Sandisk IL Ltd.
- Current Assignee Address: IL Kfar Saba
- Agency: Toler Law Group
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A method in a data storage device for storing a plurality of data bits into a non-volatile memory includes transforming a plurality of data bits to be stored in a non-volatile memory device to generate a plurality of transformed data bits. The method further includes generating a parity bit corresponding to the plurality of transformed data bits, transforming the parity bit, and storing the plurality of data bits and the transformed parity bit in the non-volatile memory device. Each of the plurality of data bits and the parity bit form an all-one codeword.
Public/Granted literature
- US20100257428A1 METHOD FOR IMPLEMENTING ERROR-CORRECTION CODES IN NON-VOLATILE MEMORY Public/Granted day:2010-10-07
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