Invention Grant
- Patent Title: Memory module, memory system, and information device
- Patent Title (中): 内存模块,内存系统和信息设备
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Application No.: US12579223Application Date: 2009-10-14
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Publication No.: US07991954B2Publication Date: 2011-08-02
- Inventor: Seiji Miura , Kazushige Ayukawa
- Applicant: Seiji Miura , Kazushige Ayukawa
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2002-344815 20021128
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A memory system including ROM and RAM in which reading and writing are enabled. A memory system includes a non-volatile memory (FLASH), DRAM, a control circuit, and an information processing device. Data in FLASH is transferred to SRAM or DRAM in advance. Data transfer between the non-volatile memory and the DRAM can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction.
Public/Granted literature
- US20100030952A1 Memory Module, Memory System, and Information Device Public/Granted day:2010-02-04
Information query