Invention Grant
- Patent Title: Refresh characteristic testing circuit and method for testing refresh using the same
- Patent Title (中): 刷新特性测试电路和测试刷新方法
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Application No.: US12215459Application Date: 2008-06-27
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Publication No.: US07990788B2Publication Date: 2011-08-02
- Inventor: Duck Hwa Hong , Sun Jong Yoo
- Applicant: Duck Hwa Hong , Sun Jong Yoo
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2007-0083696 20070820
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A refresh characteristic test circuit is provided, in a recessed semiconductor device, that is capable of verifying whether a refresh failure is caused by the neighbor/passing gate effect or not and a method for testing the refresh characteristic. The refresh characteristic test circuit includes a select signal generating unit for receiving first address signals and a test mode signal and generate select signals to select cell blocks, a main word line signal generating unit for receiving second address signals and the test mode signal and generate main word lines signals to select main word lines of the selected cell block, and a sub word line signal generating unit for receiving third address signals and the test mode signal and enable sub word lines of the selected main word line.
Public/Granted literature
- US20090052264A1 Refresh characteristic testing circuit and method for testing refresh using the same Public/Granted day:2009-02-26
Information query