Invention Grant
- Patent Title: Program method of flash memory device
- Patent Title (中): 闪存设备的程序方法
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Application No.: US12425025Application Date: 2009-04-16
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Publication No.: US07990771B2Publication Date: 2011-08-02
- Inventor: Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
- Applicant: Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2005-0086201 20050915
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/10 ; G11C16/12 ; G11C16/34
Abstract:
A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.
Public/Granted literature
- US20090207660A1 PROGRAM METHOD OF FLASH MEMORY DEVICE Public/Granted day:2009-08-20
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