Invention Grant
- Patent Title: Post-facto correction for cross coupling in a flash memory
- Patent Title (中): 闪存中交叉耦合的事后校正
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Application No.: US12699747Application Date: 2010-02-03
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Publication No.: US07990764B2Publication Date: 2011-08-02
- Inventor: Idan Alrod , Eran Sharon
- Applicant: Idan Alrod , Eran Sharon
- Applicant Address: IL Kfar Saba
- Assignee: SanDisk IL Ltd.
- Current Assignee: SanDisk IL Ltd.
- Current Assignee Address: IL Kfar Saba
- Agency: Martine Penilla Gencarella LLP.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
A method of storing and reading data, using a memory that includes a plurality of cells (e.g. flash cells), such that data are stored in the cells by setting respective values of a physical parameter of the cells (e.g. threshold voltage) to be indicative of the data, and such that data are read from the cells by measuring those values. One of the cells and its neighbors are read. The data stored in the cell are estimated, based on the measurements and on respective extents to which the neighbors disturb the reading. Preferably, the method also includes determining those respective extents to which the neighbors disturb the reading, for example based on the measurements themselves.
Public/Granted literature
- US20100135074A1 Post-Facto Correction for Cross Coupling in a Flash Memory Public/Granted day:2010-06-03
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