Invention Grant
- Patent Title: Density-conforming vertical plate capacitors exhibiting enhanced capacitance and methods of fabricating the same
- Patent Title (中): 具有增强电容的密度依赖性垂直板电容器及其制造方法
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Application No.: US11869790Application Date: 2007-10-10
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Publication No.: US07990676B2Publication Date: 2011-08-02
- Inventor: Rasit Topaloglu
- Applicant: Rasit Topaloglu
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01G4/005
- IPC: H01G4/005

Abstract:
Density-conforming vertical plate capacitors exhibiting enhanced capacitance and methods for fabricating density-conforming vertical plate capacitors exhibiting enhanced capacitance are provided. An embodiment of the density-conforming vertical plate capacitor comprises a first conductive interconnect and a second conductive interconnect. The second conductive interconnect overlies the first conductive interconnect and is substantially aligned with the first conductive interconnect. A via bar electrically couples the first conductive interconnect and the second conductive interconnect. The via bar has a width and a length that is larger than the width and contributes to the capacitance of the vertical plate capacitor.
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