Invention Grant
- Patent Title: High throughput across-wafer-variation mapping
- Patent Title (中): 高吞吐量跨晶片变化映射
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Application No.: US12173766Application Date: 2008-07-15
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Publication No.: US07990546B2Publication Date: 2011-08-02
- Inventor: Jeong Ho Yeo , Efrat Rosenman , Erez Ravid , Doron Meshulach , Gadi Greenberg , Kobi Kan , Yehuda Cohen , Shimon Levi
- Applicant: Jeong Ho Yeo , Efrat Rosenman , Erez Ravid , Doron Meshulach , Gadi Greenberg , Kobi Kan , Yehuda Cohen , Shimon Levi
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel, Ltd.
- Current Assignee: Applied Materials Israel, Ltd.
- Current Assignee Address: IL Rehovot
- Agency: SNR Denton US LLP
- Main IPC: G01B11/24
- IPC: G01B11/24

Abstract:
A method for characterizing a surface of a sample object, the method including dividing the surface into pixels which are characterized by a parameter variation, and defining blocks of the surface as respective groups of the pixels. The method further includes irradiating the pixels in multiple scans over the surface with radiation having different, respective types of polarization, and detecting returning radiation from the pixels in response to each of the scans. For each scan, respective block signatures of the blocks are constructed, in response to the returning radiation from the group of pixels in each block. Also for each scan, a block signature variation using the respective block signatures of the blocks is determined. In response to the block signature variation, one or more of the types of polarization for use in subsequent examination of a test object are selected.
Public/Granted literature
- US20090021749A1 HIGH THROUGHPUT ACROSS-WAFER-VARIATION MAPPING Public/Granted day:2009-01-22
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