Invention Grant
- Patent Title: Detection circuit and foreign matter inspection apparatus for semiconductor wafer
- Patent Title (中): 半导体晶圆检测电路及异物检查装置
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Application No.: US12266663Application Date: 2008-11-07
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Publication No.: US07990529B2Publication Date: 2011-08-02
- Inventor: Masami Makuuchi , Ritsuro Orihashi , Takahiro Jingu
- Applicant: Masami Makuuchi , Ritsuro Orihashi , Takahiro Jingu
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-292106 20071109
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
In a foreign matter inspection apparatus for a semiconductor wafer, a PMT which detects reflection light, an amplifier which amplifies a signal detected by the PMT and in which response characteristics of amplification are controlled by a control signal, an A/D converter which converts the signal amplified by the amplifier into a predetermined code and outputs the code, a control circuit which generates a control signal based on information of the semiconductor wafer having a correlation with the reflection light, and a data processing circuit which detects a foreign matter on the semiconductor wafer based on the code output from the A/D converter are provided.
Public/Granted literature
- US20090122305A1 DETECTION CIRCUIT AND FOREIGN MATTER INSPECTION APPARATUS FOR SEMICONDUCTOR WAFER Public/Granted day:2009-05-14
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