Invention Grant
US07989955B2 Semiconductor device, electronic device, and method of producing semiconductor device
有权
半导体装置，电子装置以及半导体装置的制造方法
- Patent Title: Semiconductor device, electronic device, and method of producing semiconductor device
- Patent Title (中): 半导体装置，电子装置以及半导体装置的制造方法
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Application No.: US12108718Application Date: 2008-04-24
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Publication No.: US07989955B2Publication Date: 2011-08-02
- Inventor: Iwao Yagi
- Applicant: Iwao Yagi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2007-116372 20070426
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device includes a first insulating film that includes a first opening reaching a substrate and that is provided on the substrate, a second insulating film that includes a second opening reaching the substrate through the first opening of the first insulating film and that covers the first insulating film, and a conductive pattern that is provided on the second insulating film so as to be in contact with the substrate through the second opening of the second insulating film.
Public/Granted literature
- US20080265442A1 SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2008-10-30
Information query
IPC分类:
