Invention Grant
US07989899B2 Transistor, inverter including the same and methods of manufacturing transistor and inverter
有权
晶体管，逆变器包括相同的晶体管和逆变器的制造方法
- Patent Title: Transistor, inverter including the same and methods of manufacturing transistor and inverter
- Patent Title (中): 晶体管，逆变器包括相同的晶体管和逆变器的制造方法
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Application No.: US12453106Application Date: 2009-04-29
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Publication No.: US07989899B2Publication Date: 2011-08-02
- Inventor: Huaxiang Yin , Ihun Song , Sunil Kim , Youngsoo Park
- Applicant: Huaxiang Yin , Ihun Song , Sunil Kim , Youngsoo Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0089337 20080910
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/10
Abstract:
A transistor, an inverter including the transistor, and methods of manufacturing the inverter and the transistor. A gate insulating layer of the transistor has a charge trap region. A threshold voltage may be moved in a positive (+) direction by trapping charges in the charge trap region. The transistor may be an enhancement mode oxide thin-film transistor (TFT) and may be used as an element of the inverter.
Public/Granted literature
- US20100059744A1 Transistor, inverter including the same and methods of manufacturing transistor and inverter Public/Granted day:2010-03-11
Information query
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