Invention Grant
- Patent Title: Gate structure, and semiconductor device having a gate structure
- Patent Title (中): 栅极结构和具有栅极结构的半导体器件
-
Application No.: US12483761Application Date: 2009-06-12
-
Publication No.: US07989892B2Publication Date: 2011-08-02
- Inventor: Tae-Ho Cha , Seong-Hwee Cheong , Jong-Min Baek , Jae-Hwa Park , Gil-Heyun Choi , Byung-Hee Kim , Byung-Hak Lee , Hee-Sook Park
- Applicant: Tae-Ho Cha , Seong-Hwee Cheong , Jong-Min Baek , Jae-Hwa Park , Gil-Heyun Choi , Byung-Hee Kim , Byung-Hak Lee , Hee-Sook Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0058959 20080623
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A gate structure can include a polysilicon layer, a metal layer on the polysilicon layer, a metal silicide nitride layer on the metal layer and a silicon nitride mask on the metal silicide nitride layer.
Public/Granted literature
- US20090315091A1 GATE STRUCTURE, AND SEMICONDUCTOR DEVICE HAVING A GATE STRUCTURE Public/Granted day:2009-12-24
Information query
IPC分类:
