Invention Grant
US07989796B2 Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
有权
具有同心相变材料的非易失性存储单元围绕柱布置形成
- Patent Title: Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
- Patent Title (中): 具有同心相变材料的非易失性存储单元围绕柱布置形成
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Application No.: US12051389Application Date: 2008-03-19
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Publication No.: US07989796B2Publication Date: 2011-08-02
- Inventor: Chung Hon Lam , Alejandro Gabriel Schrott
- Applicant: Chung Hon Lam , Alejandro Gabriel Schrott
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.
Public/Granted literature
- US20080157051A1 Nonvolatile Memory Cell with Concentric Phase Change Material Formed Around a Pillar Arrangement Public/Granted day:2008-07-03
Information query
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