Plasma oxidation processing method

Invention Grant

US07989364B2 Plasma oxidation processing method 有权

Title translation: 等离子体氧化处理方法

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Patent Title: Plasma oxidation processing method
Patent Title (中): 等离子体氧化处理方法
Application No.: US12439019

Application Date: 2007-08-27
Publication No.: US07989364B2

Publication Date: 2011-08-02
Inventor: Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
Applicant: Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
Applicant Address: JP Nagoya-shi JP Tokyo
Assignee: National University Corporation Nagoya University,Tokyo Electron Limited
Current Assignee: National University Corporation Nagoya University,Tokyo Electron Limited
Current Assignee Address: JP Nagoya-shi JP Tokyo
Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
Priority: JP2006-230437 20060828
International Application: PCT/JP2007/066526 WO 20070827
International Announcement: WO2008/026531 WO 20080306
Main IPC: H01L21/469
IPC: H01L21/469

Abstract:

A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.

Abstract(Chinese):

进行等离子体氧化处理，通过使用从含有氧气的工艺气体产生的O（1D2）自由基密度为1×10 12 [cm -3]以上的等离子体，在目标物体的表面上形成氧化硅膜等离子体处理装置的处理室。在等离子体氧化过程中，通过VUV单色仪63测量等离子体中的O（1D2）自由基密度，并对等离子体处理条件进行校正。

Public/Granted literature

US20090263919A1 PLASMA OXIDATION PROCESSING METHOD Public/Granted day:2009-10-22

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理