Invention Grant
- Patent Title: Hafnium lanthanide oxynitride films
- Patent Title (中): 铪镧系氮氧化物薄膜
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Application No.: US12505963Application Date: 2009-07-20
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Publication No.: US07989362B2Publication Date: 2011-08-02
- Inventor: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant: Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L23/62 ; H01L27/108 ; H01L29/78 ; H01L29/94
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a hafnium lanthanide oxynitride film.
Public/Granted literature
- US20090294924A1 HAFNIUM LANTHANIDE OXYNITRIDE FILMS Public/Granted day:2009-12-03
Information query
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