Invention Grant
- Patent Title: Method for in-situ refurbishing a ceramic substrate holder
- Patent Title (中): 原位翻新陶瓷基板支架的方法
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Application No.: US11968369Application Date: 2008-01-02
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Publication No.: US07989353B2Publication Date: 2011-08-02
- Inventor: Tadahiro Ishizaka , Kentaro Asakura , Masanao Ando , Toshio Hasegawa
- Applicant: Tadahiro Ishizaka , Kentaro Asakura , Masanao Ando , Toshio Hasegawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Method for operating a processing system and refurbishing a ceramic substrate holder within a process chamber of the processing system are described. The method includes plasma processing one or more substrates on the ceramic substrate holder, where the processing causes erosion of a nitride material of the ceramic substrate holder. The method further includes refurbishing the ceramic substrate holder in-situ without a substrate residing on the ceramic substrate holder, where the refurbishing includes exposing the ceramic substrate holder to a plasma-excited nitrogen-containing gas in the process chamber to at least partially reverse the erosion of the nitride material.
Public/Granted literature
- US20090166327A1 METHOD FOR IN-SITU REFURBISHING A CERAMIC SUBSTRATE HOLDER Public/Granted day:2009-07-02
Information query
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