Invention Grant
US07989343B2 Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features
有权
在多个凹入的半导体特征上沉积均匀的金属种子层的方法
- Patent Title: Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features
- Patent Title (中): 在多个凹入的半导体特征上沉积均匀的金属种子层的方法
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Application No.: US12802701Application Date: 2010-06-11
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Publication No.: US07989343B2Publication Date: 2011-08-02
- Inventor: Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
- Applicant: Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Shirley L. Church ESQ
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of a copper seed layer on a wafer substrate without excessive build-up on the openings of each of the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. The method also comprises depositing a second portion of the metal seed layer while redistributing at least a portion of the bottom coverage material to the sidewalls of each recessed device feature, to provide a uniform seed layer coverage over the interior surface of the recessed device features.
Public/Granted literature
- US20100255678A1 Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features Public/Granted day:2010-10-07
Information query
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