Invention Grant
- Patent Title: Methods of forming transistors
- Patent Title (中): 形成晶体管的方法
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Application No.: US11704466Application Date: 2007-02-07
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Publication No.: US07989322B2Publication Date: 2011-08-02
- Inventor: David H. Wells
- Applicant: David H. Wells
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/479
- IPC: H01L21/479

Abstract:
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
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