Invention Grant
US07989322B2 Methods of forming transistors 有权
形成晶体管的方法

Methods of forming transistors
Abstract:
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
Information query
Patent Agency Ranking
0/0