Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12824775Application Date: 2010-06-28
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Publication No.: US07989316B2Publication Date: 2011-08-02
- Inventor: Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
- Applicant: Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-179241 20070709
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
Public/Granted literature
- US20100267216A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-10-21
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