Invention Grant
- Patent Title: Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
- Patent Title (中): 半导体装置及其制造方法以及半导体装置的评价方法
-
Application No.: US12859372Application Date: 2010-08-19
-
Publication No.: US07989299B2Publication Date: 2011-08-02
- Inventor: Hidenobu Fukutome , Tomohiro Kubo
- Applicant: Hidenobu Fukutome , Tomohiro Kubo
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2004-187053 20040624
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.
Public/Granted literature
- US20100311218A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF EVALUATING SEMICONDUCTOR DEVICE Public/Granted day:2010-12-09
Information query
IPC分类:
