Invention Grant
US07989267B2 Manufacturing method of semiconductor device and manufacturing method of lead frame
有权
半导体器件的制造方法和引线框架的制造方法
- Patent Title: Manufacturing method of semiconductor device and manufacturing method of lead frame
- Patent Title (中): 半导体器件的制造方法和引线框架的制造方法
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Application No.: US12104154Application Date: 2008-04-16
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Publication No.: US07989267B2Publication Date: 2011-08-02
- Inventor: Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
- Applicant: Fujio Ito , Hiromichi Suzuki , Akihiko Kameoka , Junpei Kusukawa , Yoshitaka Takezawa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-209376 20040716
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
Public/Granted literature
- US20080199987A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF LEAD FRAME Public/Granted day:2008-08-21
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