Invention Grant
US07989267B2 Manufacturing method of semiconductor device and manufacturing method of lead frame 有权
半导体器件的制造方法和引线框架的制造方法

Manufacturing method of semiconductor device and manufacturing method of lead frame
Abstract:
Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
Information query
Patent Agency Ranking
0/0