Invention Grant
US07989265B2 Process for making a semiconductor system having devices that have contacts on top and bottom surfaces of each device
有权
制造半导体系统的方法，其具有在每个装置的顶表面和底表面上具有接触的装置
- Patent Title: Process for making a semiconductor system having devices that have contacts on top and bottom surfaces of each device
- Patent Title (中): 制造半导体系统的方法，其具有在每个装置的顶表面和底表面上具有接触的装置
-
Application No.: US12361513Application Date: 2009-01-28
-
Publication No.: US07989265B2Publication Date: 2011-08-02
- Inventor: Frederick A. Ware , Ely K. Tsern , Ian P. Shaeffer
- Applicant: Frederick A. Ware , Ely K. Tsern , Ian P. Shaeffer
- Applicant Address: US CA Los Altos
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Los Altos
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device.
Public/Granted literature
- US20090130798A1 Process for Making a Semiconductor System Public/Granted day:2009-05-21
Information query
IPC分类:
