Invention Grant
- Patent Title: Optical device
- Patent Title (中): 光学装置
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Application No.: US12464622Application Date: 2009-05-12
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Publication No.: US07989255B2Publication Date: 2011-08-02
- Inventor: Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
- Applicant: Craig Edward Murphy , Salvatore Cina , Timothy Butler , Matthew Roberts , Nalinkumar Lallubhai Patel , Clare Louise Foden , Mark Levence Leadbeater , Daniel Alan Forsythe , Robert Sidney Archer , Nicholas de Brissac Baynes , Nathan Luke Phillips , Anil Raj Duggal , Jie Liu
- Applicant Address: GB Cambridgeshire US NY Schenectady
- Assignee: Cambridge Display Technology Limited,General Electric Company
- Current Assignee: Cambridge Display Technology Limited,General Electric Company
- Current Assignee Address: GB Cambridgeshire US NY Schenectady
- Agency: Marshall, Gerstein & Borun LLP
- Priority: GB0220404.8 20020903
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.
Public/Granted literature
- US20090227052A1 OPTICAL DEVICE Public/Granted day:2009-09-10
Information query
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