Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.