Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having an organic thin film transistor
- Patent Title (中): 制造具有有机薄膜晶体管的半导体器件的方法
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Application No.: US11752340Application Date: 2007-05-23
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Publication No.: US07989143B2Publication Date: 2011-08-02
- Inventor: Tadashi Arai , Takeo Shiba , Masahiko Ando , Kazuyoshi Torii
- Applicant: Tadashi Arai , Takeo Shiba , Masahiko Ando , Kazuyoshi Torii
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-149992 20060530
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
An electrode substrate in which a lower electrode and an upper electrode are well positioned by way of an insulating film could not be formed by a printing method since positional displacement is caused. The cost was increased outstandingly when using photomasks for positioning. In the present invention, positional displacement does not occur even when using the printing method since the upper electrode and the lower electrode are positioned in self-alignment. Accordingly, a semiconductor device such as a flexible substrate using an organic semiconductor can be formed with low cost by using the printing method.
Public/Granted literature
- US20070281384A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING AN ORGANIC THIN FILM TRANSISTOR Public/Granted day:2007-12-06
Information query
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