Invention Grant
- Patent Title: Selective barrier slurry for chemical mechanical polishing
- Patent Title (中): 用于化学机械抛光的选择性阻隔浆料
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Application No.: US10952999Application Date: 2004-09-29
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Publication No.: US07988878B2Publication Date: 2011-08-02
- Inventor: Jinru Bian
- Applicant: Jinru Bian
- Applicant Address: US DE Newark
- Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee Address: US DE Newark
- Agent Blake T. Biederman
- Main IPC: C09K13/00
- IPC: C09K13/00
Abstract:
The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent selected from imine derivative compounds, hydrazine derivative compounds and mixtures thereof, and water; and the solution has an acidic pH.
Public/Granted literature
- US20060068589A1 Selective barrier slurry for chemical mechanical polishing Public/Granted day:2006-03-30
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