Invention Grant
- Patent Title: Semiconductor device and method
- Patent Title (中): 半导体器件及方法
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Application No.: US11703443Application Date: 2007-02-07
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Publication No.: US07988794B2Publication Date: 2011-08-02
- Inventor: Werner Kroninger , Josef Schwaiger , Ludwig Schneider , Lukas Ossowski
- Applicant: Werner Kroninger , Josef Schwaiger , Ludwig Schneider , Lukas Ossowski
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, P.L.L.C.
- Main IPC: H01L23/13
- IPC: H01L23/13

Abstract:
A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and second opposing sides with an active area formed on a first portion of the first side having a topology extending a first distance above the first side. A support member is attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. In some exemplary embodiments, the support member is formed by applying adhesive to the second portion. The wafer is then spun to adjust the second distance.
Public/Granted literature
- US20080185715A1 Semiconductor device and method Public/Granted day:2008-08-07
Information query
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