Temperature detection for a semiconductor component is disclosed. One embodiment includes a circuit arrangement for measuring a junction temperature of a semiconductor component that has a gate electrode and a control terminal being connected to the gate electrode and receiving a control signal for charging and discharging the gate electrode, where the gate electrode is internally connected to the control terminal via an internal gate resistor. The circuit arrangement includes: a measuring bridge circuit including the internal gate resistor and providing a measuring voltage which is dependent on the temperature dependent resistance of the internal gate resistor; an evaluation circuit receiving the measuring voltage and providing an output signal dependent on the junction temperature; a pulse generator providing a pulse signal including pulses for partially charging or discharging the gate electrode via the internal gate resistor.