Invention Grant
- Patent Title: Memory device and semiconductor device
- Patent Title (中): 存储器件和半导体器件
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Application No.: US11976788Application Date: 2007-10-29
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Publication No.: US07988057B2Publication Date: 2011-08-02
- Inventor: Ryoji Nomura
- Applicant: Ryoji Nomura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-320482 20061128
- Main IPC: G06K19/06
- IPC: G06K19/06

Abstract:
It is an object to provide a flexible semiconductor device bearing a memory device with a highly reliable storage function, where the memory device comprises a layer containing an organic compound. Specifically, the memory device has a memory element which comprises a layer including an organic compound between a pair of electrodes and a sealing layer formed over the memory element, and a moisture absorbing material is contained in the sealing layer. As the moisture absorbing material, a particle of molten silica, crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, zeolite, an oxide of an alkaline earth metal, sulfate or a high water-absorbing polymer can be used.
Public/Granted literature
- US20080121725A1 Memory device and semiconductor device Public/Granted day:2008-05-29
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