Invention Grant
- Patent Title: Apparatuses and methods for maskless mesoscale material deposition
- Patent Title (中): 无掩模中尺度材料沉积的设备和方法
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Application No.: US12349279Application Date: 2009-01-06
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Publication No.: US07987813B2Publication Date: 2011-08-02
- Inventor: Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
- Applicant: Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
- Applicant Address: US NM Albuquerque
- Assignee: Optomec, Inc.
- Current Assignee: Optomec, Inc.
- Current Assignee Address: US NM Albuquerque
- Agency: Peacock Myers, P.C.
- Agent Philip D. Askenazy
- Main IPC: B05C11/00
- IPC: B05C11/00 ; B05C11/06 ; B05B1/08 ; B05B5/00

Abstract:
Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
Public/Granted literature
- US20090114151A1 Apparatuses and Methods for Maskless Mesoscale Material Deposition Public/Granted day:2009-05-07
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