Invention Grant
- Patent Title: Semiconductor pressure sensor and fabrication method thereof
- Patent Title (中): 半导体压力传感器及其制造方法
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Application No.: US12176464Application Date: 2008-07-21
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Publication No.: US07987727B2Publication Date: 2011-08-02
- Inventor: Yasuhide Fujioka
- Applicant: Yasuhide Fujioka
- Applicant Address: JP Tokyo
- Assignee: Mitsumi Electric Co., Ltd.
- Current Assignee: Mitsumi Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2007-201148 20070801
- Main IPC: G01L9/02
- IPC: G01L9/02

Abstract:
A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.
Public/Granted literature
- US20090031817A1 Semiconductor Pressure Sensor and Fabrication Method Thereof Public/Granted day:2009-02-05
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