Invention Grant
- Patent Title: Reading memory cells using multiple thresholds
- Patent Title (中): 使用多个阈值读取存储单元
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Application No.: US11995814Application Date: 2007-10-30
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Publication No.: US07975192B2Publication Date: 2011-07-05
- Inventor: Naftali Sommer , Ofir Shalvi , Dotan Sokolov
- Applicant: Naftali Sommer , Ofir Shalvi , Dotan Sokolov
- Applicant Address: IL Herzliya Pituach
- Assignee: Anobit Technologies Ltd.
- Current Assignee: Anobit Technologies Ltd.
- Current Assignee Address: IL Herzliya Pituach
- Agency: Fish & Richardson P.C.
- International Application: PCT/IL2007/001315 WO 20071030
- International Announcement: WO2008/053472 WO 20080508
- Main IPC: G11C29/42
- IPC: G11C29/42 ; G11C29/50

Abstract:
A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.
Public/Granted literature
- US20100165730A1 READING MEMORY CELLS USING MULTIPLE THRESHOLDS Public/Granted day:2010-07-01
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