Invention Grant
US07974143B2 Memory system, a memory device, a memory controller and method thereof
失效
存储器系统,存储器件,存储器控制器及其方法
- Patent Title: Memory system, a memory device, a memory controller and method thereof
- Patent Title (中): 存储器系统,存储器件,存储器控制器及其方法
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Application No.: US12285294Application Date: 2008-10-01
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Publication No.: US07974143B2Publication Date: 2011-07-05
- Inventor: Dong-yang Lee
- Applicant: Dong-yang Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0089253 20041104
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C8/16

Abstract:
The memory system, memory device, memory controller and method may have a reduced power consumption. The memory system, memory device, memory controller and method may transition a data strobe signal to a valid logic level during a standby state. The valid logic level may be less than a logic level associated with a higher impedance level, such as when a bus may be turned off or connected to a ground voltage. A delay locked circuit need not be used in the memory device.
Public/Granted literature
- US20090044039A1 Memory system, a memory device, a memory controller and method thereof Public/Granted day:2009-02-12
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