Invention Grant
- Patent Title: Apparatus and method for transmitting/receiving signals at high speed
- Patent Title (中): 高速发送/接收信号的装置和方法
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Application No.: US12068583Application Date: 2008-02-08
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Publication No.: US07974142B2Publication Date: 2011-07-05
- Inventor: Chang-Ho Do , Jae-Il Kim
- Applicant: Chang-Ho Do , Jae-Il Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0089552 20070904; KR10-2008-0007632 20080124
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A semiconductor memory device includes: a data transferrer configured to transfer data; a main driver configured to apply the data to the data transferrer in response to a control signal; and a pre-driver configured to decrease a voltage level of the data transferrer when the voltage level of the data transferrer is higher than a logic threshold voltage, and to increase the voltage level of the data transferrer when the voltage level of the data transferrer is lower than the logic threshold voltage prior to activation of the control signal.
Public/Granted literature
- US20090059689A1 Apparatus and method for transmitting/receiving signals at high speed Public/Granted day:2009-03-05
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