Invention Grant
- Patent Title: Method and apparatus for programming flash memory
- Patent Title (中): 用于编程闪存的方法和装置
-
Application No.: US12685722Application Date: 2010-01-12
-
Publication No.: US07974129B2Publication Date: 2011-07-05
- Inventor: Erwin E. Yu , Ebrahim Abedifard , Frederick T. Jaffin , Uday Chandrasekhar
- Applicant: Erwin E. Yu , Ebrahim Abedifard , Frederick T. Jaffin , Uday Chandrasekhar
- Applicant Address: US ID Boise
- Assignee: Micron Technologies, Inc.
- Current Assignee: Micron Technologies, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.
Public/Granted literature
- US20100110797A1 METHOD AND APPARATUS FOR PROGRAMMING FLASH MEMORY Public/Granted day:2010-05-06
Information query
