Invention Grant
- Patent Title: Flash memory device and method of controlling flash memory device
- Patent Title (中): 闪存设备及控制闪存设备的方法
-
Application No.: US12822246Application Date: 2010-06-24
-
Publication No.: US07974125B2Publication Date: 2011-07-05
- Inventor: Dae-Seok Byeon , Young-Ho Lim
- Applicant: Dae-Seok Byeon , Young-Ho Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0040502 20070425
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A flash memory device includes multiple memory blocks, a decoder configured to select at least one of the memory blocks in response to block select signals, a controller configured to generate the block select signals in response to a block address and to generate a flag signal when the block address corresponds to a bad block, and an output buffer configured to output fixed data in response to the flag signal indicating that the block address corresponds to the bad block. When the block address corresponds to a bad block, the controller generates the block select signals to cause the decoder to interrupt selection of a memory block corresponding to the block address.
Public/Granted literature
- US20100259982A1 FLASH MEMORY DEVICE AND METHOD OF CONTROLLING FLASH MEMORY DEVICE Public/Granted day:2010-10-14
Information query