Invention Grant
US07974067B2 Plasma processing apparatus and method of suppressing abnormal discharge therein
有权
等离子体处理装置及其中抑制异常放电的方法
- Patent Title: Plasma processing apparatus and method of suppressing abnormal discharge therein
- Patent Title (中): 等离子体处理装置及其中抑制异常放电的方法
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Application No.: US11514267Application Date: 2006-09-01
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Publication No.: US07974067B2Publication Date: 2011-07-05
- Inventor: Natsuko Ito , Mitsuo Yasaka , Fumihiko Uesugi , Yousuke Itagaki
- Applicant: Natsuko Ito , Mitsuo Yasaka , Fumihiko Uesugi , Yousuke Itagaki
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-258157 20050906
- Main IPC: H01L21/683
- IPC: H01L21/683

Abstract:
In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.
Public/Granted literature
- US20070058322A1 Plasma processing apparatus and method of suppressing abnormal discharge therein Public/Granted day:2007-03-15
Information query
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