Invention Grant
- Patent Title: High resolution wafer inspection system
- Patent Title (中): 高分辨率晶圆检测系统
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Application No.: US12752995Application Date: 2010-04-01
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Publication No.: US07973919B2Publication Date: 2011-07-05
- Inventor: Dan Grossman , Moshe Langer , Roman Kris , Silviu Reinhorn , Ron Naftali , Haim Feldman
- Applicant: Dan Grossman , Moshe Langer , Roman Kris , Silviu Reinhorn , Ron Naftali , Haim Feldman
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel, Ltd.
- Current Assignee: Applied Materials Israel, Ltd.
- Current Assignee Address: IL Rehovot
- Agency: SNR Denton US LLP
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
A method for inspecting a region, including irradiating the region via an optical system with a pump beam at a pump wavelength. A probe beam at a probe wavelength irradiates the region so as to generate returning probe beam radiation from the region. The beams are scanned across the region at a scan rate. A detector receives the returning probe radiation, and forms an image of the region that corresponds to a resolution better than pump and probe Abbe limits of the optical system. Roles of the pump and probe beams may be alternated, and a modulation frequency of the pump beam may be changed, to produce more information. Information extracted from the probe signal can also differentiate between different materials on the region.
Public/Granted literature
- US20100188658A1 HIGH RESOLUTION WAFER INSPECTION SYSTEM Public/Granted day:2010-07-29
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