Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US12700625Application Date: 2010-02-04
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Publication No.: US07973573B2Publication Date: 2011-07-05
- Inventor: Satoshi Hanazawa , Hiroyasu Yoshizawa
- Applicant: Satoshi Hanazawa , Hiroyasu Yoshizawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-090207 20070330
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A semiconductor integrated circuit having a plurality of ultrasound pulsers corresponding to a plurality of respective channels, and integrally formed on a small area. The ultrasound pulsers each include a MOSFET gate drive circuit in which an input voltage pulse is converted into a current pulse, and the current pulse is converted again into a voltage pulse on the basis of a high potential side voltage +HV, and a low potential side voltage −HV, applied to a transducer drive circuit, and in which a voltage level shift in the input voltage pulse is attained, and a voltage pulse swing is generated by the MOSFET gate drive circuit on the basis of the high potential side voltage +HV, and the low potential side voltage −HV. The MOSFET gate drive circuit is DC-coupled with the transducer drive circuit.
Public/Granted literature
- US20100137720A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2010-06-03
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